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md7ic2251nr1 md7ic2251gnr1 1 rf device data freescale semiconductor, inc. rf ldmos wideband integrated power amplifiers the md7ic2251n wideband integrated circuit is designed with on--chip matching that makes it usable from 2110--2170 mhz. this multi--stage structure is rated for 26 to 32 volt operation and covers all typical cellular base station modulation formats. ? typical doherty single--carrier w--cdma characterization performance: v dd =28volts,i dq1(a+b) =80ma,i dq2a = 260 ma, v gs2b =1.4vdc, p out = 12 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) pae (%) output par (db) acpr (dbc) 2110 mhz 28.8 38.2 7.1 --34.6 2140 mhz 29.0 37.9 7.1 --36.2 2170 mhz 29.2 37.4 6.9 --36.1 ? capable of handling 10:1 vswr, @ 32 vdc, 2140 mhz, 63 watts cw output power (3 db input overdrive from rated p out ) ? typical p out @ 3 db compression point ? 58 watts (1) features ? 100% par tested for guaranteed output power capability ? production tested in a symmetrical doherty configuration ? characterized with large--signal load--pull parameters and common source s--parameters ? on--chip matching (50 ohm input, dc blocked) ? integrated quiescent current temperatur e compensation with enable/disable function (2) ? integrated esd protection ? 225 c capable plastic package ? in tape and reel. r1 suffix = 500 units, 44 mm tape width, 13 inch reel. figure 1. functional block diagram figure 2. pin connections note: exposed backside of the package is the source terminal for the transistors. quiescent current temperature compensation (2) v ds1a rf ina v gs1a rf out1 /v ds2a v gs2a quiescent current temperature compensation (2) v ds1b rf inb v gs1b rf out2 /v ds2b v gs2b v ds1a rf ina nc rf inb rf out1 /v ds2a 1 2 3 4 7 8 14 v gs1b 9 10 11 v gs2a v gs1a nc nc v gs2b nc v ds1b rf out2 /v ds2b 13 6 12 (top view) 5 carrier (3) peaking (3) carrier peaking 1. p3db = p avg + 7.0 db where p avg is the average output power measured using an unclipped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf. 2. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf . select documentation/application notes -- an1977 or an1987. 3. peaking and carrier orientation is determined by the test fixture design. 2110--2170 mhz, 12 w avg., 28 v single w--cdma rf ldmos wideband integrated power amplifiers md7ic2251nr1 md7ic2251gnr1 to--270 wb--14 plastic md7ic2251nr1 to--270 wb--14 gull plastic md7ic2251gnr1 document number: md7ic2251n rev. 0, 5/2012 freescale semiconductor technical data ? freescale semiconductor, inc., 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. md7ic2251nr1 md7ic2251gnr1 table 1. maximum ratings rating symbol value unit drain--source voltage v ds --0.5, +65 vdc gate--source voltage v gs --0.5, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg -- 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c input power p in 28 dbm table 2. thermal characteristics characteristic symbol value (2,3) unit final doherty application thermal resistance, junction to case case temperature 78 c, p out =12wcw stage 1, 28 vdc, i dq1(a+b) =80ma stage 2, 28 vdc, i dq2a = 260 ma, v gs2b =1.4vdc case temperature 89 c, p out =50wcw stage 1, 28 vdc, i dq1(a+b) =80ma stage 2, 28 vdc, i dq2a = 260 ma, v gs2b =1.4vdc r jc 4.8 1.5 3.7 1.0 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 1a machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) ii table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit stage 1 -- off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 1 -- on characteristics (4) gate threshold voltage (v ds =10vdc,i d =23 adc) v gs(th) 1.2 2.0 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq1(a+b) =80madc) v gs(q) ? 2.7 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq1(a+b) = 80 madc, measured in functional test) v gg(q) 6.0 7.0 8.0 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 4. each side of device measured separately. (continued)
md7ic2251nr1 md7ic2251gnr1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit stage 2 -- off characteristics (1) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 adc gate--source leakage current (v gs =1.5vdc,v ds =0vdc) i gss ? ? 1 adc stage 2 -- on characteristics (1) gate threshold voltage (v ds =10vdc,i d = 150 adc) v gs(th) 1.2 2.0 2.7 vdc gate quiescent voltage (v ds =28vdc,i dq2a = 260 madc) v gsa(q) ? 2.7 ? vdc fixture gate quiescent voltage (v dd =28vdc,i dq2a = 260 madc, measured in functional test) v gga(q) 5.5 6.3 7.5 vdc drain--source on--voltage (v gs =10vdc,i d =1adc) v ds(on) 0.1 0.24 1.2 vdc functional tests (2,3,4) (in freescale doherty production test fixture, 50 ohm system) v dd =28vdc,i dq1(a+b) =80ma,i dq2a = 260 ma, v gs2b =1.4vdc,p out = 12 w avg., f = 2140 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. power gain g ps 27.6 28.2 32.0 db power added efficiency pae 33.5 36.9 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.2 6.6 ? db adjacent channel power ratio acpr ? --34.2 --31.5 dbc typical broadband performance (in freescale doherty characterization test fixture, 50 ohm system) v dd =28vdc,i dq1(a+b) =80ma, i dq2a = 260 ma, v gs2b =1.4vdc,p out = 12 w avg., single--carrier w--cdma, iq m agnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. frequency g ps (db) pae (%) output par (db) acpr (dbc) 2110 mhz 28.8 38.2 7.1 --34.6 2140 mhz 29.0 37.9 7.1 --36.2 2170 mhz 29.2 37.4 6.9 --36.1 1. each side of device measured separately. 2. part internally matched both on input and output. 3. measurement made with device in a sy mmetrical doherty configuration. 4. measurement made with device in str aight lead configuration before any lead forming operation is applied. (continued)
4 rf device data freescale semiconductor, inc. md7ic2251nr1 md7ic2251gnr1 table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performances (1) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dq1(a+b) =80ma,i dq2a = 260 ma, v gs2b = 1.4 vdc, 2110--2170 mhz bandwidth p out @ 1 db compression point, cw p1db ? 40 ? w p out @ 3 db compression point (2) p3db ? 58 ? w imd symmetry @ 18 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 25 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 65 ? mhz quiescent current accuracy over temperature with 4.7 k ? gate feed resistors (--30 to 85 c) (3) stage 1 stage 2 ? i qt ? ? 1.5 5.0 ? ? % gain flatness in 60 mhz bandwidth @ p out =12wavg. g f ? 0.2 ? db gain variation over temperature (--30 cto+85 c) ? g ? 0.028 ? db/ c output power variation over temperature (--30 cto+85 c) ? p1db ? 0.028 ? db/ c 1. measurement made with device in a sy mmetrical doherty configuration. 2. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf. 3. refer to an1977, quiescent current thermal tracking circ uit in the rf integrated circuit family and to an1987, quiescent current control for the rf integrated circuit device family . go to http://www.freescale.com/rf . select documentation/application notes -- an1977 or an1987.
md7ic2251nr1 md7ic2251gnr1 5 rf device data freescale semiconductor, inc. figure 3. md7ic2251nr1(g nr1) production test ci rcuit component layout md7ic2251n rev. 1 cut out area v gs1a v gs2a v ds1a r1 v gs1b v gs2b v ds1b v ds2b v ds2a r2 c1 c23 c7 c9 c13 c16 c22 c8 c10 c15 c19 c18 c20 c17 z1 r5 r3 r4 c2 c5 c6 c14 c21 c12 c11 c3 c4 c p table 6. md7ic2251nr1(gnr1) pr oduction test circuit component designations and values part description part number manufacturer c1, c2, c3, c4, c5, c6 10 f chip capacitors grm55dr61h106ka88l murata c7, c8 4.7 pf chip capacitors ATC600F4R7BT250XT atc c9, c10 5.6 pf chip capacitors atc600f5r6bt250xt atc c11, c12 39 pf chip capacitors atc600f390jt250xt atc c13, c14, c15, c16, c17, c18 4.7 f chip capacitors grm31cr71h475ka12l murata c19, c20 0.5 pf chip capacitors atc600f0r5bt250xt atc c21 0.9 pf chip capacitor atc600f0r9bt250xt atc c22, c23 1.0 f chip capacitors grm31cr71h105ka12l murata r1, r2, r3, r4 4.7 k ? , 1/4 w chip resistors crcw12064k70fkea vishay r5 50 ? , 10 w, termination rfp-06012a15z50 anaren z1 2100--2200 mhz, 90 , 3 db chip hybrid coupler gsc355-hyb2150 soshin pcb 0.020 , r =3.5 rf-35a2 taconic
6 rf device data freescale semiconductor, inc. md7ic2251nr1 md7ic2251gnr1 figure 4. md7ic2251nr1(gnr1) character ization test circuit component layout md7ic2251n rev. 1 cut out area v gs1a v gs2a v ds1a r1 v gs1b v gs2b v ds1b v ds2b v ds2a r2 c1 c23 c7 c9 c13 c16 c22 c8 c10 c15 c19 c18 c20 c17 z1 r5 r3 r4 c2 c5 c6 c14 c21 c12 c11 c3 c4 c p table 7. md7ic2251nr1(gnr1) characterization t est circuit component designations and values part description part number manufacturer c1, c2, c3, c4, c5, c6 10 f chip capacitors grm55dr61h106ka88l murata c7, c8 4.7 pf chip capacitors ATC600F4R7BT250XT atc c9, c10 5.6 pf chip capacitors atc600f5r6bt250xt atc c11, c12 39 pf chip capacitors atc600f390jt250xt atc c13, c14, c15, c16, c17, c18 4.7 f chip capacitors grm31cr71h475ka12l murata c19, c20 0.5 pf chip capacitors atc600f0r5bt250xt atc c21 0.9 pf chip capacitor atc600f0r9bt250xt atc c22, c23 1.0 f chip capacitors grm31cr71h105ka12l murata r1, r2, r3, r4 4.7 k ? , 1/4 w chip resistors crcw12064k70fkea vishay r5 50 ? , 10 w, termination rfp-06012a15z50 anaren z1 2100--2200 mhz, 90 , 3 db chip hybrid coupler gsc355-hyb2150 soshin pcb 0.020 , r =3.5 rf-35a2 taconic
md7ic2251nr1 md7ic2251gnr1 7 rf device data freescale semiconductor, inc. typical characteristics 2060 acpr f, frequency (mhz) figure 5. output peak--to--average ratio compression (parc) broadband performance @ p out = 12 watts avg. -- 4 0 -- 1 -- 2 -- 3 31 30.6 -- 4 0 39 37 35 33 -- 3 0 -- 3 2 -- 3 4 -- 3 6 pae, power added efficiency (%) g ps , power gain (db) 29.8 29 28.2 27.4 2080 2100 2120 2140 2160 2180 2200 2220 31 -- 3 8 -- 5 acpr (dbc) figure 6. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 7 0 -- 2 0 -- 3 0 1 100 imd, intermodulatio n distortion (dbc) -- 4 0 im5--u im5--l im7--l im7--u v dd =28vdc,p out = 18 w (pep) i dq1(a+b) =80ma,i dq2a = 260 ma figure 7. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) -- 1 -- 3 -- 5 10 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 5 15 20 26 50 46 42 38 34 30 pae, power added efficiency (%) --1db=7.2w --2db=9.9w --3db=12.5w 30 acpr acpr (dbc) -- 5 0 -- 2 0 -- 2 5 -- 3 0 -- 4 0 -- 3 5 -- 4 5 30 g ps , power gain (db) 29 28 27 26 25 24 g ps 30.2 29.4 28.6 27.8 27 input signal par = 9.9 db @ 0.01% probab ility on ccdf 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf pae parc 25 pae parc parc (db) g ps v dd =28vdc,p out =12w(avg.) i dq1(a+b) =80ma,i dq2a = 260 ma v gs2b = 1.4 vdc, single--carrier w--cdma 3.84 mhz channel bandwidth -- 5 0 -- 6 0 v gs2b = 1.4 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz im3--l im3--u -- 6 v dd =28vdc,i dq1(a+b) =80ma i dq2a = 260 ma, v gs2b =1.4vdc f = 2140 mhz, single--carrier w--cdma
8 rf device data freescale semiconductor, inc. md7ic2251nr1 md7ic2251gnr1 typical characteristics 1 acpr p out , output power (watts) avg. figure 8. single--carrier w--cdma power gain, power added efficiency and acpr versus output power -- 3 0 -- 3 5 25 31 0 60 pae, power added efficiency (%) g ps , power gain (db) 30 10 100 acpr (dbc) 28 27 -- 2 0 -- 4 0 -- 4 5 -- 5 0 figure 9. broadband frequency response 0 36 1800 f, frequency (mhz) 30 24 18 1900 gain (db) gain 2000 2100 2200 2600 12 29 50 40 30 20 10 6 g ps v dd =28vdc,i dq1(a+b) =80ma i dq2a = 260 ma, v gs2b =1.4vdc pae 2110 mhz v dd =28vdc p in =0dbm i dq1(a+b) =80ma i dq2a = 260 ma v gs2b =1.4vdc 2300 2400 2500 26 -- 2 5 2140 mhz 2170 mhz single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf 2140 mhz 2110 mhz 2170 mhz w--cdma test signal 10 0.0001 100 0 peak--to--average (db) figure 10. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 2468 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ 5mhzoffset. input signal par = 9.9 db @ 0.01% probabilit y on ccdf input signal 12 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8 -- 3 . 6 -- 5 . 4 -- 9 9 f, frequency (mhz) figure 11. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0
md7ic2251nr1 md7ic2251gnr1 9 rf device data freescale semiconductor, inc. v dd =28vdc,i dq1(a+b) =80ma,i dq2a = 260 ma , cw f (mhz) z in ( ? ) z load (1) ( ? ) max output power p1db p3db (dbm) (w) pae (%) (dbm) (w) pae (%) 2110 68.0 ? j42.0 7.20 ? j14.0 45.8 38 52.2 46.4 44 53.1 2140 60.6 ? j37.0 7.40 ? j14.4 45.7 37 51.9 46.4 44 52.7 2170 54.0 ? j31.0 7.30 ? j14.7 45.7 37 51.6 46.4 44 52.2 (1) load impedance for optimum p1db power. z in = impedance as measured from input contact to ground. z load = impedance as measured from drain contact to ground. figure 12. carrier side load pull performance ? maximum p1db tuning device under test output load pull tuner z in z load v dd =28vdc,i dq1(a+b) =80ma,i dq2a = 260 ma , cw f (mhz) z in ( ? ) z load (1) ( ? ) max power added efficiency p1db p3db (dbm) (w) pae (%) (dbm) (w) pae (%) 2110 60.0 ? j53.0 9.10 ? j8.80 44.4 28 58.1 45.0 32.0 57.6 2140 54.0 ? j46.0 8.20 ? j9.10 44.4 28 57.6 44.9 31.0 57.0 2170 48.0 ? j39.0 7.90 ? j9.60 44.4 28 57.4 45.0 32.0 56.7 (1) load impedance for optimum p1db efficiency. z in = impedance as measured from input contact to ground. z load = impedance as measured from drain contact to ground. figure 13. carrier side load pull performance ? maximum power added efficiency tuning device under test output load pull tuner z in z load
10 rf device data freescale semiconductor, inc. md7ic2251nr1 md7ic2251gnr1 package dimensions
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16 rf device data freescale semiconductor, inc. md7ic2251nr1 md7ic2251gnr1 product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an1977: quiescent current thermal tracking circuit in the rf integrated circuit family ? an1987: quiescent current control for the rf integrated circuit device family ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 may 2012 ? initial release of data sheet
md7ic2251nr1 md7ic2251gnr1 17 rf device data freescale semiconductor, inc. information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: http://www.reg.net/v2/webservices/freescale/docs/termsandconditions.htm. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: md7ic2251n rev. 0, 5/2012

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